Spin injection via (110)-grown semiconductor barriers
نویسندگان
چکیده
منابع مشابه
Symmetry and spin dephasing in (110)-grown quantum wells.
Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying ...
متن کامل"Spin Injection and Scattering in Semiconductor Heterostructures"*
Efforts to implement semiconductor-based spintronic devices have been crippled by the lack of an efficient and practical means to electrically inject spin-polarized carriers into a semiconductor heterostructure. Spin injection from semimagnetic semiconductor contacts (ZnMnSe/AlGaAs/GaAs) has produced electron spin polarizations of ~ 85% in the GaAs QW [1]. Several factors potentially limit spin...
متن کاملSpin polarization, dephasing, and photoinduced spin diffusion in (110)-grown two-dimensional electron systems
R. Völkl,1 M. Schwemmer,1 M. Griesbeck,1 S. A. Tarasenko,2 D. Schuh,1 W. Wegscheider,3 C. Schüller,1 and T. Korn1,* 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany 2A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia 3Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland (Rece...
متن کاملElectrical spin injection and detection in lateral all-semiconductor devices
Both electrical injection and detection of spin-polarized electrons are demonstrated in a single wafer allsemiconductor GaAs-based lateral spintronic device, employing p+Ga,Mn As /n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. Spin-dependent phenomena, such as spin precession and spin-valve effect, are observed in nonlocal signal and the measurements reveal the unusual origin of ...
متن کاملSpin injection in a semiconductor through a space-charge layer
http://dx.doi.org/10.1016/j.sse.2014.06.035 0038-1101/ 2014 Elsevier Ltd. All rights reserved. ⇑ Corresponding author. Tel.: +43 15880136060. E-mail addresses: [email protected] (J. Ghosh), [email protected]. at (T. Windbacher), [email protected] (V. Sverdlov), [email protected]. ac.at (S. Selberherr). Joydeep Ghosh ⇑, Thomas Windbacher, Viktor Sverdlov, Siegfried Selber...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2014
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.89.155306